Core Specifications & Technical Advantages:Silicon Wafer Technology: Utilizes 210mm large-size silicon wafers with half-cell technology to enhance power density and efficiency.Multi-Busbar (MBB) Technology: Improves optical utilization and reduces internal current loss for higher performance.Non-Destructive Cutting: Minimizes micro-crack risks and enhances module durability.Anti-PID Certification: Certified by TÜV Nord for resistance to Potential Induced Degradation (PID).Power Output: 585–605W (dual-glass configuration), ideal for high-power applications.Dimensions & Structure:Cell size: 182×91mm (120 cells arranged in 6×20 layout)8.Module dimensions: 2278×1134×30mm (length × width × thickness).Dual-glass design: 2.0mm anti-reflective coated tempered glass front and back.Frame: Anodized aluminum alloy with IP68-rated junction box and MC4 connectors.Certifications: Complies with TÜV, IEC, and other international standards.